Semiconductor device and method of manufacturing the same

摘要

Disclosed is a semiconductor device having a substrate including first and second regions. First interlayer insulation layers and conductive patterns alternately are stacked on a first region of the substrate. A second interlayer insulation layer covers the first interlayer insulation layers and the conductive patterns. A resistor is formed in the second interlayer insulation layer in the second region of the substrate.

主权项

1. A semiconductor device, comprising:
a substrate including first and second regions; first interlayer insulation layers and conductive patterns alternately stacked in the first region of the substrate; a through hole passing through the first interlayer insulation layers and the conductive patterns; a channel layer formed in the through hole; a second interlayer insulation layer covering the first interlayer insulation layers and the conductive patterns; and a resistor formed in the second interlayer insulation layer in the second region of the substrate.