| 发明名称 | Integration of dense and variable pitch fin structures | ||
| 摘要 | Semiconductor devices and method for forming the same. Methods for forming fin structures include forming a protective layer over a set of mandrels in a variable fin pitch region; forming first sidewalls around a set of mandrels in a uniform fin pitch region; removing the set of mandrels in the uniform fin pitch region; removing the protective layer; forming second sidewalls around the first sidewalls in the uniform fin pitch region and the mandrels in the variable fin pitch region; removing the first sidewalls and the mandrels; and etching an underlying layer around the second sidewalls. | ||
| 申请公布号 | US9040371(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201313961336 | 申请日期 | 2013.08.07 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Cheng Kangguo;Colburn Matthew E.;Doris Bruce B.;Khakifirooz Ali |
| 分类号 | H01L21/336;H01L21/8234;H01L21/84;H01L21/308;H01L27/108;H01L29/06 | 主分类号 | H01L21/336 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
| 主权项 | 1. A method for forming fin structures, comprising: forming a protective layer over a set of mandrels in a variable fin pitch region; forming first sidewalls around a set of mandrels in a uniform fin pitch region; removing the set of mandrels in the uniform fin pitch region; removing the protective layer; forming second sidewalls around the first sidewalls in the uniform fin pitch region and the mandrels in the variable fin pitch region; removing the first sidewalls and the mandrels; and etching an underlying layer around the second sidewalls. | ||
| 地址 | Armonk NY US | ||