Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

摘要

A solid-state imaging device including a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.

主权项

1. A method of manufacturing a solid-state imaging device, comprising:
forming a gate insulating film lined hole with a desired depth extending from a front surface side of a substrate toward a rear surface side of the substrate; forming a vertical gate electrode that causes a reading-out portion formed at a surface side of the substrate to read out the signal charges accumulated in a photoelectric conversion unit by embedding an electrode material into the gate insulating film lined hole; forming a wire layer where a plurality of layers of wires are stacked, on the front surface side of the substrate in an interlayer insulating film; turning over the substrate after bonding a support substrate onto the wire layer; removing the gate insulating film formed in the through-hole to a predetermined depth and reducing the thickness of the substrate until the hole extends to the rear surface side of the substrate; and forming a charge fixing film having negative fixed charges covering the entire rear surface of the substrate and filling the through-hole where the gate insulating film was removed with the charge fixing claim.