Image device and methods of forming the same

摘要

A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is formed over the pixel region to expose the periphery region. A plurality of first trenches is etched into the substrate in the periphery region. Each first trench, each first opening and each second opening are filled with a dielectric material. A second patterned mask layer is formed over the periphery region to expose the pixel region. The dielectric material in each second opening over the pixel region is removed. A plurality of dopants is implanted through each second opening to form various doped isolation features in the pixel region.

主权项

1. A method of forming an image sensor device, the method comprising:
forming a patterned hard mask layer over a substrate, wherein the patterned hard mask layer has a plurality of first openings in a periphery region of the substrate, and a plurality of second openings in a pixel region of the substrate; forming a first patterned mask layer over the pixel region to expose the periphery region; etching a plurality of first trenches into the substrate in the periphery region; filling each first trench, each first opening and each second opening with a dielectric material; forming a second patterned mask layer over the periphery region to expose the pixel region; removing the dielectric material in each second opening over the pixel region; and implanting dopant through each second opening to form doped isolation features in the pixel region.