Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp

摘要

A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

主权项

1. A method of manufacturing a group-III nitride compound semiconductor light-emitting device, comprising steps of:
forming an intermediate layer made of a group-III nitride compound on a substrate by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer each made of a group-III nitride compound semiconductor on the intermediate layer, wherein nitrogen is used as the group-V element, the thickness of the intermediate layer is in the range of 20 to 80 nm, the intermediate layer is formed by a sputtering method, an underlying layer included in the n-type semiconductor is formed on the intermediate layer, the underlying layer is formed of a GaN-based compound semiconductor, and the intermediate layer has high crystallinity wherein a half width of an XRC spectrum of the (0002) plane of an undoped GaN layer is less than 150 arcsec, and a half width of an XRC spectrum of the (10-10) plane is less than 350 arcsec.