| 摘要 |
A semiconductor device according to the present invention comprises a first channel film; a second channel film protruding from the first channel film; a pipe gate including a silicide area surrounding the first channel film; a tunnel insulation film surrounding the second channel film; a data storage film surrounding the second channel film on both sides of the tunnel insulation film; and interlayer insulation films and conductive patterns surrounding the second channel film on both sides of the data storage film and the tunnel insulation film, and alternately laminated. |
