发明名称 ATOMIC LAYER DEPOSITION APPARATUS AND METHOD THEREOF
摘要 When it comes to atomic layer deposition, a unit process chamber for atomic layer deposition process to separate and combine its upper side and lower side is arranged in many pieces in a laminated shape, and the efficiency of an atomic layer deposition process can be improved as a plate is transmitted in the order of an entering chamber, a process chamber and an ejection chamber and processed consecutively by bringing in an atomic layer deposition type plate to a process chamber and connecting an entering/ejection chamber to be ejected with a process chamber in the form of No.1. In addition, productivity and process efficiency can be improved as securing lots of process chambers even when the height of a ceiling in whose space an atomic layer deposition apparatus is installed is limited by connecting big quantities of atomic layer deposition apparatus in No.1 shape or connecting them in No.1 shape on both sides based on an entering/ejection chamber. In addition, a film deposition process is run by dividing the thickness of film deposition to be formed in each process chamber according to its characteristics such as a thin film type and its thickness, etc. and various complex thin films can also be formed such as thin film 1, thin film 2 and thin film 3, etc.
申请公布号 KR20150056305(A) 申请公布日期 2015.05.26
申请号 KR20130139156 申请日期 2013.11.15
申请人 KORNIC ENC CO., LTD. 发明人 LEE, CHOON SOO;JEONG, HONG KI
分类号 C23C16/448;C23C16/50 主分类号 C23C16/448
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