发明名称 |
Polishing composition for nickel-phosphorous-coated memory disks |
摘要 |
The invention provides a chemical-mechanical polishing composition containing wet-process silica, an oxidizing agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate. |
申请公布号 |
US9039914(B2) |
申请公布日期 |
2015.05.26 |
申请号 |
US201213478292 |
申请日期 |
2012.05.23 |
申请人 |
Cabot Microelectronics Corporation |
发明人 |
Palanisamy Chinnathambi Selvaraj;Siriwardane Haresh |
分类号 |
B44C1/22;C09K3/14;H01L21/321;H01L21/306 |
主分类号 |
B44C1/22 |
代理机构 |
|
代理人 |
Omholt Thomas E;Koszyk Francis J |
主权项 |
1. A method of chemically-mechanically polishing a memory or rigid disk substrate, which method comprises:
(i) providing a memory or rigid disk substrate comprising at least one layer of nickel-phosphorous, (ii) providing a polishing pad, (iii) providing a polishing composition comprising:
(a) wet-process silica,(b) an oxidizing agent that oxidizes nickel-phosphorous,(c) a chelating agent,(d) polyvinyl alcohol, wherein the polyvinyl alcohol has a degree of hydrolysis of about 90% or more,(e) water, wherein the polishing composition has a pH of about 1 to about 4, (iv) contacting a surface of the substrate with the polishing pad and the polishing composition, and (v) abrading at least a portion of the surface of the substrate to remove at least some nickel-phosphorous from the surface of the substrate and to polish the surface of the substrate. |
地址 |
Aurora IL US |