Batch-type remote plasma processing apparatus

摘要

A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

主权项

1. A method of manufacturing a semiconductor device by employing a plasma processing apparatus, the method comprising:
accommodating a plurality of substrates in a processing chamber; supplying a plurality of types of processing gases in the processing chamber from a gas blowout opening, wherein at least one processing gas is supplied in the processing chamber after activating in an electrical discharging chamber by applying high frequency electricity between a pair of electrodes; and removing the processing gases from the processing chamber through a gas exhaust opening, wherein the plasma processing apparatus includes:
a processing tube;the processing chamber provided in the processing tube;the electrical discharging chamber having a guttering shape provided in the processing tube, which is a space to activate a processing gas by applying high frequency electricity between the pair of electrodes provided in a direction of stacking the substrates;the gas blowout opening provided in the electrical discharging chamber to supply an activated processing gas to the processing chamber, wherein the gas blowout opening is provided at only one side of the substrates; andthe gas exhaust opening provided at a circumferential position in the processing tube that is different from the circumferential position in the processing tube of the gas blowout opening, and when the substrates are accommodated in the processing tube, the substrates are accommodated outside the electrical discharging chamber.