Plasma-enhanced etching in an augmented plasma processing system

摘要

Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

主权项

1. A method for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure, comprising:
providing a primary feed gas into said primary plasma generating region; wherein the primary feed gas is provided to said primary plasma generating region from outside the plasma processing chamber; providing a secondary feed gas into said secondary plasma generating region, said secondary feed gas being different from said primary feed gas; generating a primary plasma from said primary feed gas; generating a secondary plasma from said secondary feed gas; etching said substrate using at least said primary plasma and neutral species from said secondary plasma, said neutral species migrating from said secondary plasma generating region to said primary plasma generating region across said semi-barrier structure, wherein said semi-barrier structure provides a barrier to the transfer of charged particles and plasma from the primary plasma generating region to the secondary plasma generating region.