发明名称 Control of inputs to a memory device
摘要 A memory device includes a command decoder and control interface logic. One or more external inputs, such as row and column address strobes, communicate with the command decoder through the control interface logic. A control signal is also in communication with the control interface logic. During operation of a drowsy mode in the memory device, a self-refresh signal causes the control signal to disable the external inputs. With the external inputs disabled, command hazards are reduced when exiting drowsy mode.
申请公布号 US9042195(B2) 申请公布日期 2015.05.26
申请号 US201314088762 申请日期 2013.11.25
申请人 Micron Technology, Inc. 发明人 Ito Yutaka;Nomura Masayoshi;Abe Keiichiro
分类号 G11C7/00;G11C8/18;G11C7/10;G11C11/406;G11C11/4076 主分类号 G11C7/00
代理机构 Knobbe, Martens, Olson & Bear, LLP 代理人 Knobbe, Martens, Olson & Bear, LLP
主权项 1. A semiconductor integrated circuit device comprising: a command decoder configured to control a memory system by decoding a memory system input signal, the command decoder further configured to receive the memory system input signal and a control signal, and to disable the memory system input signal based at least in part on the control signal; self-refresh logic configured to provide a self-refresh signal based at least in part on an external clock enable signal, the control signal based at least in part on the self-refresh signal; and a path-gate electrically coupled to the self-refresh logic and configured to receive the external clock enable signal and provide the external clock enable signal to the self-refresh logic, the path-gate receiving power from a main voltage generator and a secondary voltage generator in the event that the main voltage generator powers off.
地址 Boise ID US