发明名称 |
Control of inputs to a memory device |
摘要 |
A memory device includes a command decoder and control interface logic. One or more external inputs, such as row and column address strobes, communicate with the command decoder through the control interface logic. A control signal is also in communication with the control interface logic. During operation of a drowsy mode in the memory device, a self-refresh signal causes the control signal to disable the external inputs. With the external inputs disabled, command hazards are reduced when exiting drowsy mode. |
申请公布号 |
US9042195(B2) |
申请公布日期 |
2015.05.26 |
申请号 |
US201314088762 |
申请日期 |
2013.11.25 |
申请人 |
Micron Technology, Inc. |
发明人 |
Ito Yutaka;Nomura Masayoshi;Abe Keiichiro |
分类号 |
G11C7/00;G11C8/18;G11C7/10;G11C11/406;G11C11/4076 |
主分类号 |
G11C7/00 |
代理机构 |
Knobbe, Martens, Olson & Bear, LLP |
代理人 |
Knobbe, Martens, Olson & Bear, LLP |
主权项 |
1. A semiconductor integrated circuit device comprising:
a command decoder configured to control a memory system by decoding a memory system input signal, the command decoder further configured to receive the memory system input signal and a control signal, and to disable the memory system input signal based at least in part on the control signal; self-refresh logic configured to provide a self-refresh signal based at least in part on an external clock enable signal, the control signal based at least in part on the self-refresh signal; and a path-gate electrically coupled to the self-refresh logic and configured to receive the external clock enable signal and provide the external clock enable signal to the self-refresh logic, the path-gate receiving power from a main voltage generator and a secondary voltage generator in the event that the main voltage generator powers off. |
地址 |
Boise ID US |