Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device

摘要

A non-volatile memory device including a cell array, which includes a plurality of memory cells, and a sense amplification circuit. The sense amplification circuit is configured to receive a data voltage of a memory cell, a first reference voltage and a second reference voltage during a data read operation of the memory cell, generate differential output signals based on a voltage level difference between the data voltage and the first and second reference voltages, and output the differential output signals as data read from the memory cell.

主权项

1. A method of reading data from a non-volatile memory device, comprising:
receiving, at a first sense amplifier, a data voltage, a first reference voltage and a second reference voltage, wherein the data voltage corresponds to data stored in a memory cell; sensing, at the first sense amplifier, a voltage level difference between the data voltage and the first and second reference voltages to generate first and second differential output signals; and amplifying, at a second sense amplifier, the first and second differential output signals to generate read data for the memory cell.