Racetrack memory with electric-field assisted domain wall injection for low-power write operation

摘要

Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.

主权项

1. A method for injecting domain walls in a magnetic racetrack memory comprising:
coupling a racetrack comprising a nanowire with a gate in order to manipulate an anisotropy associated with the nanowire; and coupling the racetrack and gate with a pinning layer configured to establish a magnetization direction in the nanowire; wherein the pinning layer comprises antiferromagnetic material; wherein the gate comprises a nonmagnetic metal electrode adjacent to a dielectric layer; wherein the pinning layer and the gate are disposed on opposite sides of the nanowire, such that the nanowire is sandwiched in between the pinning layer and the gate.