APPARATUS AND METHOD FOR TREATING SUBSTRATE

摘要

The present invention provides a substrate treating apparatus. The substrate treating apparatus includes a first supply unit, a second supply unit, a first source, a second source, and a gas separating member. Plasma generated by the first source from a first gas supplied from the first supply unit is used for treating the center of the substrate. Plasma generated by the second source from a second gas supplied from the second supply unit is used for treating the edge of the substrate. The gas separating member prevents the plasma from the first gas and the plasma from the second gas from being mixed.