Semiconductor device and operating method for the same

摘要

A semiconductor device and an operating method for the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped region, a fourth doped region and a first gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity. The first doped region is surrounded by the second doped region. The third doped region has the first type conductivity. The fourth doped region has the second type conductivity. The first gate structure is on the second doped region. The third doped region and the fourth doped region are in the second doped region and the first doped region on opposing sides of the first gate structure respectively.

主权项

1. A semiconductor structure, comprising:
a first doped region having a first type conductivity; a second doped region having a second type conductivity opposite to the first type conductivity, wherein the first doped region is surrounded by the second doped region; a third doped region having the first type conductivity; a fourth doped region having the second type conductivity; a first gate structure on the second doped region, wherein the third doped region and the fourth doped region are in the second doped region and the first doped region on opposing sides of the first gate structure respectively; a fifth doped region comprising a doped well, wherein the fifth doped region and the doped well have the first type conductivity, the second doped region is surrounded by the fifth doped region; a sixth doped region having the second type conductivity; and a doped contact region having the first type conductivity and in the sixth doped region; and a second gate structure on the doped well of the fifth doped region and on the sixth doped region.