| 发明名称 | Avalanche photodiode | ||
| 摘要 | According to one aspect, there is provided an avalanche photodiode comprising a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap; a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap; and a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current. | ||
| 申请公布号 | US9041136(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201214351608 | 申请日期 | 2012.10.19 |
| 申请人 | Agency for Science, Technology and Research | 发明人 | Chia Ching Kean |
| 分类号 | H01L31/107 | 主分类号 | H01L31/107 |
| 代理机构 | Schwegman Lundberg & Woessner, P.A. | 代理人 | Schwegman Lundberg & Woessner, P.A. |
| 主权项 | 1. An avalanche photodiode comprising a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap; a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap; and a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current and to allow for a photocurrent with a substantially vertical profile near the breakdown voltage of the avalanche photodiode. | ||
| 地址 | Singapore SG | ||