Solid-state image pickup device

摘要

A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.

主权项

1. A solid-state image pickup device including a plurality of pixels, each of the plurality of pixels comprising:
a photoelectric conversion portion configured to generate charges in accordance with incident light; a charge holding portion including a first semiconductor region of a first conductivity type configured to hold the charges generated by the photoelectric conversion portion in a portion different from the photoelectric conversion portion; a floating diffusion; and a transfer portion including a transfer gate electrode configured to control a potential between the first semiconductor region of the first conductivity type and the floating diffusion, wherein a second semiconductor region of a second conductivity type is disposed under at least part of the first semiconductor region of a first conductivity type, wherein a third semiconductor region of the second conductivity type is disposed at a deeper position than the second semiconductor region of the second conductivity type, the third semiconductor region of the second conductivity type extending under the transfer gate electrode, the floating diffusion, and at least part of the first semiconductor region of the first conductivity type, wherein an end portion of the third semiconductor region of the second conductivity type, on a photoelectric conversion portion side, is offset from an end portion of the second semiconductor region of the second conductivity type on the photoelectric conversion portion side by an offset end portion which is under at least part of the second semiconductor region of the second conductivity type, and wherein a part of a fourth semiconductor region of the first conductivity type constituting part of the photoelectric conversion portion is disposed in the offset end portion, wherein a fifth semiconductor region of the first conductivity type is disposed between the transfer gate electrode and an uppermost surface of the third semiconductor region of the second conductivity type under the transfer gate electrode, and wherein a first-conductivity-type impurity concentration of the first semiconductor region of the first conductivity type is higher than a first-conductivity-type impurity concentration of the fourth semiconductor region of the first conductivity type.