FinFET device technology with LDMOS structures for high voltage operations

摘要

The present invention is a finFET type semiconductor device using LDMOS features. The device includes a first portion of a substrate doped with a second doping type and has a first trench, second trench, and first fin. The second portion of the substrate with a first doping type includes a third trench and second fin. The second fin between the second and third trench covers a part the first portion and a part of the second portion of the substrate. A first segment of the second fin is between the second segment and second trench. A second segment covers a part of the second portion of the substrate and is between the first segment and third trench. A gate covering at least a part of the first segment and a part of the first portion and a part of the second portion of the substrate.

主权项

1. A semiconductor device comprising:
a substrate having a first portion being doped with a second doping type and a second portion being doped with a first doping type, the first portion including: a first trench; a second trench; a first fin between the first trench and the second trench; and the second portion of the substrate including: a third trench; a second fin between the second trench and the third trench, the second fin covering a part of the first portion of the substrate and a part of the second portion of the substrate, a first segment of the second fin, the first segment between the second trench and a second segment of the second fin, the second segment of the second fin covering a part of the second portion of the substrate is between the first segment of the second fin and the third trench; a gate covering at least a part of the first segment and covering at least a part of the first portion of the substrate and a part of the second portion of the substrate; and wherein the first fin functions as a drain, the first segment of the second fin under the gate functions as a channel, the first segment of the second fin not covered by the gate functions as a float, and the second segment of the second fin not covered by the gate functions as a source.