Semiconductor device, semiconductor unit, and power semiconductor device

摘要

A semiconductor device includes: an insulating substrate; a first electrode pattern and a second electrode pattern provided apart from each other on a major surface of the insulating substrate; a semiconductor element connected to the first electrode pattern; an electrode terminal connected to the second electrode pattern; and a connection wiring. The connection wiring electrically connects the first electrode pattern and the second electrode pattern with each other and has a thermal resistance larger than that of the first electrode pattern.

主权项

1. A semiconductor device, comprising:
an insulating substrate; a first electrode pattern and a second electrode pattern provided apart from each other on a major surface of the insulating substrate; a first semiconductor element connected to the first electrode pattern; a second semiconductor element connected to the first electrode pattern; a third semiconductor element connected to the second electrode pattern; a fourth semiconductor element connected to the second electrode pattern; an electrode terminal connected to the second electrode pattern; a connection wiring electrically connecting the first electrode pattern and the second electrode pattern to each other and having a thermal resistance larger than that of the first electrode pattern; a first connection member connecting the first electrode pattern and the first semiconductor element to each other; and a second connection member connecting the second electrode pattern and the electrode terminal to each other and having a melting point lower than that of the first connection member, wherein the insulating substrate includes a first insulating substrate on which the first electrode pattern is provided and a second insulating substrate on which the second electrode pattern is provided, the second insulating substrate being provided apart from the first insulating substrate, the first semiconductor element and the second semiconductor element each comprise a switching element respectively configured to be in a conducting state during different operating periods, the third semiconductor element and the fourth semiconductor element each comprise a switching element respectively configured to be in a conducting state during different operating periods, the first semiconductor element and the third semiconductor element each comprise a switching element respectively configured to be in a conducting state during operating periods which overlap with each other at least in a part thereof, and the second semiconductor element and the fourth semiconductor element each comprise a switching element respectively configured to be in a conducting state during operating periods which overlap with each other at least in a part thereof.