发明名称 |
Nonvolatile memory device and method for manufacturing same |
摘要 |
According to one embodiment, a nonvolatile memory device includes a first interconnect, an insulating layer, a needle-like metal oxide, and a second interconnect. The insulating layer is provided on the first interconnect. The needle-like metal oxide pierces the insulating layer in a vertical direction. The second interconnect is provided on the insulating layer. |
申请公布号 |
US9040950(B2) |
申请公布日期 |
2015.05.26 |
申请号 |
US201113225926 |
申请日期 |
2011.09.06 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Matsuo Kouji |
分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A nonvolatile memory device, comprising:
a first interconnect; an insulating layer provided on the first interconnect; a needle-like metal oxide piercing the insulating layer to extend throughout an entire thickness of the insulating layer in a vertical direction; and a second interconnect provided on the insulating layer; wherein the insulating layer is formed of an oxide, and an absolute value of a change of a Gibbs free energy per mole of oxygen atoms when a metal included in the needle-like metal oxide changes into a metal oxide of the needle-like metal oxide is less than an absolute value of a change of a Gibbs free energy per mole of oxygen atoms when a metal or a semimetal included in the insulating layer changes into the oxide of the insulating layer; and further comprising a lower electrode layer provided between the first interconnect and the insulating layer to contact the insulating layer, the needle-like metal oxide being formed of an oxide of the same type of metal as a metal included in the lower electrode layer. |
地址 |
Tokyo JP |