| 发明名称 | Nanoscale switching device | ||
| 摘要 | A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed. | ||
| 申请公布号 | US9040948(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201013821173 | 申请日期 | 2010.09.16 |
| 申请人 | Hewlett-Packard Development Company, L.P. | 发明人 | Ribeiro Gilberto;Nickel Janice H;Yang Jianhua |
| 分类号 | H01L45/00;H01L27/24 | 主分类号 | H01L45/00 |
| 代理机构 | Hewlett-Packard Patent Department | 代理人 | Hewlett-Packard Patent Department |
| 主权项 | 1. A nanoscale switching device comprising: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region; wherein the area that constrains current flow within the active region comprises a lateral oxidation region of the switching material. | ||
| 地址 | Houston TX US | ||