Semiconductor package

摘要

A semiconductor package, wherein, in bonding of members constituting the semiconductor package, by using bonding layers containing 98 wt % or more of one metallic element such as silver having a melting point of 400° C. or higher, the bonding is performed in a temperature range where the occurrence of warpage or distortion of the members is suppressed, and after the bonding, a high melting point is obtained; and by configuring the members so that all the surfaces of the members which become bonding surfaces of bonding layers are parallel to each other, all the thickness directions of the bonding layers are aligned to be in the same direction, and during the formation of the bonding layers, the pressing direction is set to be one-way direction which is the direction of laminating the members.

主权项

1. A semiconductor package comprising:
a flat substrate having a fixation area where a semiconductor device is fixed on an upper surface; a ceramic frame body having a planar shape including upper-layer and lower-layer ceramic frames, a printed wiring being formed on an upper surface of the lower-layer ceramic frame, portions of the upper-layer ceramic frame corresponding to two ends of the printed wiring being narrower than the lower-layer ceramic frame in width so that the both ends of the printed wiring are exposed to be used as terminals, the ceramic frame body surrounds the fixation area and is laminated on an upper surface of the substrate, and the bottom surface of the ceramic frame body being bonded to the upper surface of the substrate through a first bonding layer; a metal ring which has a shape corresponding to a shape of the frame in the upper surface of the upper-layer ceramic frame, and the metal ring is laminated on the upper surface of the upper-layer ceramic frame to be bonded to the upper-layer ceramic frame through a second bonding layer; and a lead which is laminated on the printed wiring to be bonded to the printed wiring through a third bonding layer, wherein each of the first bonding layer, the second bonding layer, and the third bonding layer contains 98 wt % or more of at least one metallic element of bonding layers having a melting point of 400° C. or higher and is formed by nanoparticles of the metal element.