发明名称 |
Three-dimensional integrated circuit with inter-layer vias and intra-layer coupled transistors |
摘要 |
A circuit comprises a first layer and a second layer separate from the first layer. The first layer comprises a power line, a first transistor coupled to the power line, a second transistor coupled to the power line, and a first line coupling the first transistor and the second transistor. The second layer comprises a ground line, a third transistor coupled to the ground line, a fourth transistor coupled to the ground line, and a second line coupling the third transistor and the fourth transistor. The circuit also comprises an inter-layer interconnect that couples the first transistor and the third transistor. The inter-layer interconnect also couples the second transistor and the fourth transistor. |
申请公布号 |
US9041078(B1) |
申请公布日期 |
2015.05.26 |
申请号 |
US201314108454 |
申请日期 |
2013.12.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Lee Jam-Wem |
分类号 |
H01L21/66;H01L25/11;H01L25/00 |
主分类号 |
H01L21/66 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. A circuit comprising:
a first layer comprising:
a power line;a first transistor having a gate, a source and a drain, the source of the first transistor being coupled to the power line;a second transistor having a gate, a source and a drain, the source of the second transistor being coupled to the power line; anda first line coupling the drain of the first transistor and the gate of the second transistor; a second layer comprising:
a ground line;a third transistor having a gate, a source and a drain, the drain of the third transistor being coupled to the ground line;a fourth transistor having a gate, a source and a drain, the drain of the fourth transistor being coupled to the ground line;a second line coupling the source of the third transistor and the gate of the fourth transistor; and an inter-layer interconnect coupling the drain of the first transistor to the source of the third transistor, and the drain of the second transistor to the source of the fourth transistor. |
地址 |
TW |