Fabrication of a magnetic tunnel junction device

摘要

A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, a non-transitory computer-readable medium includes processor executable instructions. The instructions, when executed by a processor, cause the processor to initiate deposition of a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer. The instructions, when executed by the processor, cause the processor to initiate oxidization of a first layer of the capping material to form a first oxidized layer of oxidized material.

主权项

1. A non-transitory computer-readable medium comprising processor executable instructions that, when executed by a processor, cause the processor to:
initiate deposition of a capping material on a free layer of a magnetic tunneling junction structure to form a capping layer; and initiate formation of a first oxidized layer of oxidized material on the capping layer, wherein the first oxidized layer is positioned further from the free layer than a second layer of the capping material.