| 发明名称 | Charge sensors using inverted lateral bipolar junction transistors | ||
| 摘要 | A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor. | ||
| 申请公布号 | US9040929(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201213561671 | 申请日期 | 2012.07.30 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Cai Jin;Ning Tak H.;Yau Jeng-Bang;Zafar Sufi |
| 分类号 | G01T1/24;H01L31/115;H01L27/146 | 主分类号 | G01T1/24 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Percello Louis J. |
| 主权项 | 1. A sensor, comprising: a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor; a level surface formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor; and a detection layer directly on an entirety of the level surface. | ||
| 地址 | Armonk NY US | ||