发明名称 |
Methods of forming single crystal silicon structures and semiconductor device structures including single crystal silicon structures |
摘要 |
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created. |
申请公布号 |
US9040424(B2) |
申请公布日期 |
2015.05.26 |
申请号 |
US201213416834 |
申请日期 |
2012.03.09 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Fucsko Janos;Wells David H.;Flynn Patrick;Lee Whonchee |
分类号 |
H01L21/311;H01L21/306;H01L21/762;H01L29/66 |
主分类号 |
H01L21/311 |
代理机构 |
TraskBritt |
代理人 |
TraskBritt |
主权项 |
1. A method of forming at least one single crystal silicon structure, the method comprising:
forming at least one trench in a surface of a (100) silicon substrate; forming a liner material over each of the surface of the (100) silicon substrate and portions of sidewalls of the at least one trench proximate the surface of the (100) silicon substrate; and anisotropically wet etching exposed surfaces of the at least one trench to undercut the (100) silicon substrate. |
地址 |
Boise ID US |