| 发明名称 |
Enhanced capture pads for through semiconductor vias |
| 摘要 |
Method of forming a capture pad on a semiconductor substrate. The method includes providing a semiconductor substrate having an active side and an inactive side and having a plurality of unfilled TSVs extending between the active side and the inactive side; filling the TSVs with a metal; defining capture pad areas on at least one of the active side and the inactive side adjacent to the TSVs, the defined capture pad areas comprising insulator islands and open areas; filling the open areas with the same metal to form a capture pad in direct contact with each of the TSVs, each of the capture pads having an all metal portion that follows an outline of each of the TSVs. |
| 申请公布号 |
US9040418(B2) |
申请公布日期 |
2015.05.26 |
| 申请号 |
US201314076233 |
申请日期 |
2013.11.10 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Farooq Mukta G.;Griesemer John A.;Lafontant Gary;Petrarca Kevin S.;Volant Richard P. |
| 分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L21/44;H01L21/768 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
Blecker Ira D.;Meyers Steven J. |
| 主权项 |
1. A method of forming a capture pad on a semiconductor substrate comprising:
providing a semiconductor substrate having an active side and an inactive side and having a plurality of unfilled through silicon vias (TSVs) extending between the active side and the inactive side; filling the TSVs with a metal; defining capture pad areas on at least one of the active side and the inactive side adjacent to the TSVs, the defined capture pad areas comprising insulator islands and open areas; and filling the open areas with the same metal to form a capture pad in direct contact with each of the TSVs, each of the capture pads having an all metal portion devoid of the insulator islands that follows an outline of each of the TSVs and a mixed portion comprising insulator islands dispersed in the metal. |
| 地址 |
Armonk NY US |
