| 发明名称 | Releasable buried layer for 3-D fabrication and methods of manufacturing | ||
| 摘要 | A releasable buried layer for 3-D fabrication and methods of manufacturing is disclosed. The method includes forming an interposer structure which includes forming a carbon rich dielectric releasable layer over a wafer. The method further includes forming back end of the line (BEOL) layers over the carbon rich dielectric layer, including wiring layers and solder bumps. The method further includes bonding the solder bumps to a substrate using flip chip processes. The flip chip processes comprises reflowing the solder bumps and rapidly cooling down the solder bumps which releases the carbon rich dielectric releasable layer from the wafer. | ||
| 申请公布号 | US9040390(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201213483663 | 申请日期 | 2012.05.30 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Daubenspeck Timothy H.;Molis Steven E.;Osborne, Jr. Gordon C.;Sauter Wolfgang;Sprogis Edmund J. |
| 分类号 | H01L21/46;H01L21/683;H01L23/498;H01L21/48;H01L21/768;H01L25/065 | 主分类号 | H01L21/46 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Canale Anthony;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A method of forming an interposer structure, comprising: forming a carbon rich dielectric releasable layer over a wafer; forming back end of the line (BEOL) layers over the carbon rich dielectric layer, including wiring layers and solder bumps; and bonding the solder bumps to a substrate using flip chip processes, wherein the flip chip processes comprises reflowing the solder bumps and rapidly cooling down the solder bumps which releases the carbon rich dielectric releasable layer from the wafer. | ||
| 地址 | Armonk NY US | ||