| 主权项 |
1. A system comprising:
a resistive random access memory cell including
a resistive element, anda switching element,
wherein the switching element includes a metal-oxide semiconductor field-effect transistor, wherein a substrate of the metal-oxide semiconductor field-effect transistor is connected to a reference potential of the resistive random access memory cell,wherein the resistive random access memory cell has (i) a first terminal (ii) a second terminal, and (iii) a second terminal,wherein the first terminal is connected to a bit line, andwherein the second terminal is connected to a word line; andwherein the third terminal is connected to a reference potential; and a driver circuit configured to apply, in response to selection of the resistive random access memory cell using the word line,
a first voltage of a first polarity to the bit line to program the resistive random access memory cell to a first state by causing current to flow through the resistive element in a first direction, anda second voltage of a second polarity to the bit line to program the resistive random access memory cell to a second state by causing current to flow through the resistive element in a second direction. |
