发明名称 |
Light-emitting diode and method of fabricating the same |
摘要 |
Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate. |
申请公布号 |
US9041038(B2) |
申请公布日期 |
2015.05.26 |
申请号 |
US201314098687 |
申请日期 |
2013.12.06 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Lee Jin Woong;Kim Kyoung Wan;Yoon Yeo Jin;Kim Ye Seul;Kim Tae Kyoon |
分类号 |
H01L33/00;H01L33/38;H01L33/20;H01L33/46;H01L23/00 |
主分类号 |
H01L33/00 |
代理机构 |
H.C. Park & Associates PLC |
代理人 |
H.C. Park & Associates PLC |
主权项 |
1. A Light-Emitting Diode (LED), comprising:
a semiconductor stack structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack structure being disposed on a substrate; a conductive substrate disposed on the semiconductor stack structure; and an electrode disposed on and in ohmic contact with the conductive substrate, wherein the electrode comprises:
grooves penetrating the electrode and a portion of the conductive substrate;an electrode pad; andextension pads extended from the electrode pad. |
地址 |
Ansan-si KR |