Photoelectric conversion apparatus and imaging system using the same

摘要

A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element.

主权项

1. A photoelectric conversion apparatus comprising:
a first photoelectric conversion element having a semiconductor region of a first conductivity type capable of accumulating a signal charge; a second photoelectric conversion element adjacent to the first photoelectric conversion element along a first direction, the second photoelectric conversion element having a semiconductor region of the first conductivity type; a third photoelectric conversion element adjacent to the first photoelectric conversion element along a second direction that crosses the first direction, the third photoelectric conversion element having a semiconductor region of the first conductivity type; a first semiconductor region of a second conductivity type opposite to the first conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the first semiconductor region having a first width; a second semiconductor region of the second conductivity type arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the third photoelectric conversion element, the second semiconductor region having a second width narrower than the first width; and a third semiconductor region arranged adjacent to the first semiconductor region along a third direction crossing the first direction, and arranged between the semiconductor region of the first conductivity type of the first photoelectric conversion element and the semiconductor region of the first conductivity type of the second photoelectric conversion element, the third semiconductor region having a potential for the signal charge lower than that of the first semiconductor region.