| 摘要 |
In the present invention, disclosed are a power semiconductor device and a manufacturing method thereof, capable of improving a breakdown voltage. According to one embodiment of the present invention, disclosed is the power semiconductor device which includes a semiconductor layer of a first conductive type, a first column of a second conductive type which is formed with a preset depth from the upper side of the semiconductor layer, a second column of the second conductive type which is formed on the end of the first column, a well region of the second conductive type which is formed on the upper side of the first column, and a source region of the first conductive type is formed on the well region. |
