| 摘要 |
The present invention provides a substrate processing apparatus. The substrate treating apparatus includes a chamber which has a processing space inside, a gas supply unit which supplies a reaction gas to the chamber, a top liner with a ring shape which is arranged in the chamber to face a top wall of the chamber, and a liner support unit which is arranged on the inner side of the top liner and supports the top liner. The top linear includes a first step part which is located on the inner end of the first surface to be stepped and a second step part which is located on the inner end of the second surface which is opposite to the first surface to be stepped and is located on the linear support unit. The top liner is supported by the liner support unit by locating either the first step part or the second step part on the liner support unit. |
