| 摘要 |
According to a first aspect, the embodiments of the present invention provide a transistor which includes at least one gate region between at least one drain region and at least one source region. Wherein, a ratio of the width of the gate region to the length of the gate region exceeds 300. The length of the gate region corresponds to the length of a conductive channel between the drain region and the source region. The embodiments of the present invention relate to inductance and/or capacitance. |
