| 摘要 |
The present invention provides a method for manufacturing an array substrate, comprising the steps of: forming gate electrode to each pixel area on a substrate in which a plurality of pixel areas are defined; forming a gate insulation film on the whole surface of the substrate on the gate electrode; sequentially forming an oxide semiconductor layer which is formed by corresponding to the gate electrodes on the gate insulation film, a first sacrificial pattern, and a source electrode and a drain electrode which are separated each other; exposing an area exposed between the source electrode and the drain electrode with chlorine plasma in the first sacrificial pattern and changing the same into a by-product area which is removed by reacting with deionized water; and proceeding a rinsing process using the deionized water and removing the by-product area of the first sacrificial pattern, and the array substrate manufactured by the same. |
