MAGNETIC RESISTANCE STRUCTURE, METHOD FOR MANUFACTURING THE MAGNETIC RESISTANCE STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
摘要
Disclosed are a magnetic resistance structure, a manufacturing method thereof, and an electronic device including the same. The disclosed method for manufacturing the magnetic resistance structure includes the steps of: forming a hexagonal boron nitride layer; forming a graphene layer on the boron nitride layer; forming a first magnetic material layer between the graphene layer and the boron nitride layer by an intercalation process; and forming a second magnetic material layer on the graphene layer.
申请公布号
KR20150055688(A)
申请公布日期
2015.05.22
申请号
KR20130137885
申请日期
2013.11.13
申请人
SAMSUNG ELECTRONICS CO., LTD.;RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
发明人
SUH, HWAN SOO;JEON, IN SU;KIM, MIN WOO;SONG, YOUNG JAE;WANG MIN;WU QINKE;LEE, SUNG JOO;JANG, SUNG KYU;JUNG, SEONG JUN