发明名称 MAGNETIC RESISTANCE STRUCTURE, METHOD FOR MANUFACTURING THE MAGNETIC RESISTANCE STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
摘要 Disclosed are a magnetic resistance structure, a manufacturing method thereof, and an electronic device including the same. The disclosed method for manufacturing the magnetic resistance structure includes the steps of: forming a hexagonal boron nitride layer; forming a graphene layer on the boron nitride layer; forming a first magnetic material layer between the graphene layer and the boron nitride layer by an intercalation process; and forming a second magnetic material layer on the graphene layer.
申请公布号 KR20150055688(A) 申请公布日期 2015.05.22
申请号 KR20130137885 申请日期 2013.11.13
申请人 SAMSUNG ELECTRONICS CO., LTD.;RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY 发明人 SUH, HWAN SOO;JEON, IN SU;KIM, MIN WOO;SONG, YOUNG JAE;WANG MIN;WU QINKE;LEE, SUNG JOO;JANG, SUNG KYU;JUNG, SEONG JUN
分类号 H01L43/08;H01L27/105 主分类号 H01L43/08
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