| 摘要 |
The present invention provides a thin film transistor, a driving back plate, and a manufacturing method thereof. The manufacturing method of the thin film transistor comprises; a step of forming a gate insulating film which covers a gate electrode on a transparent insulating substrate; a step of forming a gate insulating film which covers the gate electrode on the transparent insulating substrate; a step of forming a patterned photoconductive semiconductor layer including an excess area which is integrally formed with an overlapped layer overlapped with the gate electrode on the gate insulating film and is extended and formed to the outside of the gate electrode; a step of forming a source area and a drain area of the thin film transistor by converting the excess area into a conductor through electromagnetic radiation; a step of forming a patterned protection layer which covers the photoconductive semiconductor layer and has a pixel electrode contact hole to expose the drain area; a step of forming a pixel electrode connected to the drain area through the pixel electrode contact hole; and a step of forming an insulating layer which covers the protection layer and exposes a part of the pixel electrode. The present invention forms a source area, a drain area, and a channel at a time by converting a photoconductive semiconductor material partially. According to the present invention, a manufacturing process is simple and an operation rate of facilities can be improved. |
