| 摘要 |
<p>The invention relates to image sensors more particularly to time delay and integration (TDI) sensors. According to the invention the sensor comprises rows of photodiodes alternated with rows of gates adjacent the photodiodes. The gates are asymmetric on one side they lie adjacent a photodiode and on the other side they comprise narrow gate fingers (20) that extend towards another photodiode. Because of their narrow width the fingers endow the charge transfer with directionality. Between two successive photodiodes (PH1,PH2) there are two gates (G2B ,G2A) both of which lie adjacent both photodiodes the first gate having its narrow fingers turned toward the first photodiode and the second gate having its narrow fingers turned toward the second photodiode. It is possible to choose the direction of charge transfer in the sensor by neutralising either the first gate or the second gate the other gate receiving alternated potentials enabling charge transfer from one photodiode to the other.</p> |
