| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which a crack on an SOQ (Silicon On Quartz) substrate can be easily detected.SOLUTION: A method of manufacturing a semiconductor device includes: a step of preparing a SOQ substrate in which a semiconductor layer is formed on a quartz substrate; a step of forming a plurality of semiconductor device-forming regions and forming a crack inspection pattern on the SOQ substrate; a first inspection step of monitoring the pattern to detect whether a crack is generated in the pattern; and a second inspection step of inspecting the semiconductor device-forming regions to detect the crack therein when the crack is generated in the pattern as result of the first inspection step. |
