SUPERIOR INTEGRITY OF A HIGH-K GATE STACK BY FORMING A CONTROLLED UNDERCUT ON THE BASIS OF A WET CHEMISTRY

摘要

A transistor device includes a gate electrode structure. The gate electrode structure includes a high-k gate insulation layer, a metal-containing first electrode material positioned above the high-k gate insulation layer, and a second electrode material positioned above the metal-containing first electrode material. The high-k gate insulation layer has a length that is less than a length of the second electrode material.