发明名称 |
Resistive Random Access Memory (RRAM) with Improved Forming Voltage Characteristics and Method for Making |
摘要 |
The present disclosure provides resistive random access memory (RRAM) structures and methods of making the same. The RRAM structures include a bottom electrode having protruded step portion that allows formation of a self-aligned conductive path with a top electrode during operation. The protruded step portion may have an inclination angle of about 30 degrees to 150 degrees. Multiple RRAM structures may be formed by etching through a RRAM stack. |
申请公布号 |
US2015137059(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201314081916 |
申请日期 |
2013.11.15 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Jonathan Tehan;Chou Chung-Cheng;Lee Po-Hao;Tu Kuo-Chi |
分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A resistive random access memory (RRAM), comprising:
a bottom electrode having a protruded step portion; a resistive material layer conformally covering the protruded step portion of the bottom electrode; and a top electrode over the resistive material layer. |
地址 |
Hsin-Chu TW |