发明名称 |
METAL OXIDE SEMICONDUCTOR GAS SENSOR HAVING NANOSTRUCTURE AND METHOD FOR MANUFACTURING SAME |
摘要 |
Disclosed is a metal oxide semiconductor gas sensor having a nanostructure, the metal oxide semiconductor gas sensor including: a substrate; a first electrode formed on the substrate; a gas sensing layer provided on the first electrode, made of a metal oxide semiconductor which has a nanostructure and of which electrical conductivity changes when the metal oxide semiconductor reacts with gas to be sensed, and formed by oblique angle deposition; a second electrode formed on the metal oxide semiconductor; and a control unit for measuring the electrical conductivity of the gas sensing layer to sense the gas by applying a predetermined amount of current through the first and the second electrodes. |
申请公布号 |
US2015137836(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
US201214407966 |
申请日期 |
2012.06.18 |
申请人 |
Kim Jong Kyu;Kwon Hyun Ah;Hwang Sun Yong |
发明人 |
Kim Jong Kyu;Kwon Hyun Ah;Hwang Sun Yong |
分类号 |
G01N27/12 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A metal oxide semiconductor gas sensor having a nanostructure, the metal oxide semiconductor gas sensor comprising:
a substrate; a first electrode formed on the substrate; a gas sensing layer provided on the first electrode, made of a metal oxide semiconductor which has a nanostructure and of which electrical conductivity changes when the metal oxide semiconductor reacts with gas to be sensed, and formed by oblique angle deposition; a second electrode formed on the metal oxide semiconductor; and a control unit for measuring the electrical conductivity of the gas sensing layer to sense the gas by applying a predetermined amount of current through the first and the second electrodes. |
地址 |
Pohang-si KR |