| 发明名称 |
HIGH-FREQUENCY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A high-frequency semiconductor device, wherein on one surface of a semiconductor substrate, a first insulating layer, an undoped epitaxial polysilicon layer in a state of column crystal, a second insulating layer, and a semiconductor layer are formed in order from a side of the one surface, and a high-frequency transistor is formed in a location of the semiconductor layer facing the undoped epitaxial polysilicon layer with the second insulating layer in between. |
| 申请公布号 |
US2015137238(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201314368728 |
申请日期 |
2013.01.30 |
| 申请人 |
Sony Corporation |
发明人 |
Tsunemi Hiroki;Yamagata Hideo;Nagai Kenji;Ibusuki Yuji |
| 分类号 |
H01L29/78;H01L21/768;H01L23/522 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A high-frequency semiconductor device, comprising:
a first insulating layer; an undoped epitaxial polysilicon layer in a state of column crystal; a second insulating layer; a semiconductor layer; and a high-frequency transistor, wherein the first insulating layer, the undoped epitaxial polysilicon layer, the second insulating layer, and the semiconductor layer are formed on one surface of a semiconductor substrate in order from the one surface, and the high-frequency transistor is formed in a location of the semiconductor layer facing the undoped epitaxial polysilicon layer with the second insulating layer in between. |
| 地址 |
Tokyo JP |
