Flash Memory Embedded with HKMG Technology

摘要

An integrated circuit structure includes a flash memory cell and a logic MOS device. The flash memory cell includes a floating gate dielectric, a floating gate overlying the floating gate dielectric, a control gate overlying the floating gate, a word-line on a first side of the floating gate and the control gate, and an erase gate on a second side of the floating gate and the control gate. The logic MOS device includes a high-k gate dielectric, and a gate electrode over the high-k gate dielectric. The gate electrode, the control gate, the word-line, and the erase gate are formed of a same metal-containing material, and have top surfaces coplanar with each other.

主权项

1. An integrated circuit structure comprising:
a flash memory cell comprising:
a floating gate dielectric;a floating gate overlying the floating gate dielectric;a control gate overlying the floating gate;a word-line on a first side of the floating gate and the control gate; andan erase gate on a second side of the floating gate and the control gate, wherein the control gate, the word-line, and the erase gate comprise a metal.