| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method of a silicon nitride film that enables the improvement in productivity of a deposition device, while satisfying requests from users, such as uniformity, electrical or physical characteristics, and processability of films, without depending only on the improvement of hardware.SOLUTION: A deposition method of a silicon nitride film includes: a process (1) of repeating n times (where n is a finite value of once or more) a step 1 of supplying silicon material gas including silicon toward a processing target surface and a step 3 of supplying a decomposition acceleration gas including a material accelerating decomposition of the silicon material gas toward the processing target surface; and a process (2) of repeating p times (where p is a finite value of once or more) a step 6 of supplying nitride gas including nitride toward the processing target surface; a sequence from the process (1) to process (2) is defined as one cycle, and once cycle is repeated m times (where m is a finite value of once or more) to deposit a silicon nitride film on the processing target surface. |
