SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

主权项

1. A method for manufacturing a semiconductor light emitting device, the method comprising:
sequentially stacking a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate; selectively removing portions of the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer; forming a first electrode in the area formed by the removal of a portion of the first conductive semiconductor layer; forming an insulating layer on a portion of the second conducive semiconductor layer; forming a transparent electrode on the second conductive semiconductor layer and the insulating layer; removing a portion of the transparent electrode formed on the insulating layer to expose a portion of the insulating layer; forming a reflection unit in the area in which the insulating layer is exposed; and forming a second electrode on the transparent electrode and the reflection unit.