发明名称 |
SILICON NANOWIRE-BASED SENSOR ARRAYS |
摘要 |
A method for fabricating silicon nanowires. The method includes the steps of: depositing a silicon nitride layer on a silicon on insulator (SOI) starting wafer; patterning the silicon nitride to define at least one silicon microbar; etching the SOI starting wafer to expose the at least one silicon microbar, wherein the at least one microbar is surrounded by a raised perimeter; growing a silicon oxide layer on the raised perimeter of the at least one microbar; and etching a portion of the at least one silicon microbar to produce at least one silicon nanowire adjacent the silicon oxide layer. |
申请公布号 |
CA2930570(A1) |
申请公布日期 |
2015.05.21 |
申请号 |
CA20142930570 |
申请日期 |
2014.11.13 |
申请人 |
MICHIGAN TECHNOLOGICAL UNIVERSITY |
发明人 |
DAUNAIS, THOMAS;BERGSTROM, PAUL L. |
分类号 |
H01L21/00;B82Y10/00;B82Y40/00;G01N27/02;G01N27/416 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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