| 摘要 |
Disclosed in the present invention are methods of forming replacement gate structures and fins. One method disclosed includes, among other things, removing a sacrificial gate structure to thereby define a replacement gate cavity, performing an etching process through the replacement gate cavity to define a fin structure in a layer of semiconductor material using a patterned hard mask exposed within the replacement gate cavity as an etch mask and forming a replacement gate structure in the replacement gate cavity around at least a portion of the fin structure. |
