SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

A semiconductor device and a fabricating method thereof are provided. The semiconductor device fabricating method forms a first interfacial insulation layer and a first metal contact plug to penetrate the first interfacial insulation layer on a substrate; forms a second interfacial insulation layer and a first interfacial wiring to penetrate the second interfacial insulation layer and overlap with the first metal contact plug on the first metal contact plug; etches the second interfacial insulation layer using the first interfacial wiring as a mask until the first metal contact plug is exposed; forms a metal contact plug by etching a portion of the first metal contact plug exposed using the first interfacial wiring as a mask; and forms a third interfacial insulation layer to cover the first interfacial wiring.