| 发明名称 |
HYDROGEN ION SENSOR |
| 摘要 |
Provided is a hydrogen ion sensor including: a substrate having a well and a first contact, the well having a second, a third, a fourth and a fifth contacts, the second contact having the same conductive type as the well, and the third, the fourth, and the fifth contacts having an opposite conductive type to the well; a first gate insulation layer on a region between the fourth contact and the fifth contact; a second gate insulation layer on a region between the third contact and the fourth contact; and a hydrogen ion sensing unit formed on the first gate insulation layer, wherein the hydrogen ion sensing unit transfers a voltage level adjusted according to a hydrogen ion concentration of a solution to be measured, to the first gate insulation layer. |
| 申请公布号 |
US2015137190(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201414546476 |
申请日期 |
2014.11.18 |
| 申请人 |
Kyungpook National University Industry-Academic Cooperation Foundation |
发明人 |
Kang Shin-Won;Jeong Hyun-Min;Yun Hyeon-Ji;Kwon Hyurk-Choon |
| 分类号 |
G01N27/414;H01L29/788 |
主分类号 |
G01N27/414 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A hydrogen ion sensor comprising:
a substrate having a well and a first contact, the well having a second, a third, a fourth and a fifth contacts, the second contact having the same conductive type as the well, and the third, the fourth, and the fifth contacts having an opposite conductive type to the well; a first gate insulation layer on a region between the fourth contact and the fifth contact; a second gate insulation layer on a region between the third contact and the fourth contact; and a hydrogen ion sensing unit on the first gate insulation layer, wherein the hydrogen ion sensing unit transfers a voltage level adjusted according to a hydrogen ion concentration of a solution to be measured, to the first gate insulation layer. |
| 地址 |
Daegu KR |
